INFLUENCE OF DIFFUSION PARAMETERS ON THE MORPHOLOGY OF COBALT IMPURITY CLUMPS IN SILICON

Abstract

^{The article examines the sequence of processes of formation of clusters of impurity cobalt atoms located in the volume of silicon single crystals in an
electrically neutral state. The results of studies to determine the morphological parameters of impurity accumulations are presented. Based on the experimental data obtained, it was revealed that, depending on the size and shape of impurity accumulations, they have different structural structures. It has also been established that the atoms of the main and technological impurities have an uneven distribution over the volume of impurity accumulations.}